FII50-12E Просмотр технического описания (PDF) - IXYS CORPORATION
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FII50-12E Datasheet PDF : 4 Pages
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20
mJ
16
Eon
12
8
4
0
0
td(on)
tr
Eon
Erec(off)
20
40
100
9n0s
80
70 t
60
VCE = 600 V 50
VGE = ±15 V 40
RG = 39 Ω 30
TVJ = 125°C 20
10
0
60 A 80
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
8
VCE = 600 V
mJ VGE = ±15 V
Eon
6 IC = 35 A
TVJ = 125°C
4
Eon
td(on)
160
ns
120
t
80
2
tr
40
Erec(off)
0
0
10 20 30 40 50 60 70 Ω 80
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
70
TVJ = 125°C
60
IF = 30 A
VR = 600 V
50
40
30
350
IRM
300
250
RG=
200
tRR
150
20
100
10
50
0
0
0
200
400
600
800 1000 1200 1400 1600 1800
-diF/dt [A/µs]
Fig. 11 Typ. turn off characteristics
of free wheeling diode
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FII 50-12E
6
mJ
Eoff 4
VCE = 600 V
VGE = ±15 V
RG = 39 Ω
TVJ = 125°C
2
0
0
20
1200
Eoff
ns
1000
800 t
td(off)
600
400
200
tf
0
40
60 A 80
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
4
mJ
Eoff 3
VCE = 600 V
VGE = ±15 V
IC = 35 A
TVJ = 125°C
Eoff
2
800
ns
600
t
400
td(off)
1
200
tf
0
0
10 20 30 40 50 60 70Ω 80
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
12
10
TVJ = 125°C
VR = 600 V
RG=
15Ω
24Ω
70A
56Ω 39Ω
8
75Ω
50A
35A
6
IF=
4
15A
7,5A
2
0
0
200
400
600
800
1000 1200 1400 1600 1800
-diF/dt [A/µs]
Fig. 12 Typ. turn off characteristics
of free wheeling diode
4-4
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