FII50-12E Просмотр технического описания (PDF) - IXYS CORPORATION
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FII50-12E Datasheet PDF : 4 Pages
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FII 50-12E
Diodes
Symbol
IF25
IF90
Conditions
TC = 25°C
TC = 90°C
Maximum Ratings
48
A
25
A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
Erec(off)
RthJC
RthJS
Conditions
Characteristic Values
min. typ. max.
IF = 30 A; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
2.4 2.8 V
1.8
V
51
A
180
ns
1.8
mJ
(per diode)
1.3 K/W
1.6
K/W
Component
Symbol
TVJ
Tstg
VISOL
FC
Conditions
IISOL ≤ 1 mA; 50/60 Hz
mounting force with clip
Maximum Ratings
-55...+150
°C
-55...+125
°C
2500
V~
20...120
N
Symbol
dS,dA
dS,dA
Weight
Conditions
pin - pin
pin - backside metal
Characteristic Values
min. typ. max.
1.7
mm
5.5
mm
9
g
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 45 mΩ
Diode (typ. at TJ = 125°C)
V0 = 1.26V; R0 = 15 mΩ
Thermal Response
IGBT
Cth1 = 0.067 J/K; Rth1 = 0.108 K/W
Cth2 = 0.175 J/K; Rth2 = 0.491 K/W
Diode
Cth1 = 0.039 J/K; Rth1 = 0.337 K/W
Cth2 = 0.090 J/K; Rth2 = 0.963 K/W
Dimensions in mm (1 mm = 0.0394")
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