IXTA3N120 Просмотр технического описания (PDF) - IXYS CORPORATION
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Компоненты Описание
производитель
IXTA3N120 Datasheet PDF : 4 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.5 2.2
S
1050 1300 pF
100 125 pF
25 50 pF
17
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
15
ns
RG = 4.7 Ω (External),
32
ns
18
ns
39
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
9
nC
22
nC
(TO-220)
0.8 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
3A
12 A
1.5 V
700
ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXTA/IXTP 3N120
IXTA/IXTP 3N110
TO-220 (IXTP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-263 (IXTA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,017,508 5,049,961 5,187,117 5,486,715
5,034,796 5,063,307 5,237,481 5,381,025
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