IXGH25N120 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
IXGH25N120 Datasheet PDF : 2 Pages
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Symbol
gfs
Cies
Coes
C
res
Q
g
Qge
Qgc
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
tri
E
on
td(off)
tfi
Eoff
RthJC
RthCK
IXGH 25N120
IXGH 25N120A
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
8 15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
2750
pF
200
pF
50
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
25N120
25N120A
25N120A
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for V (Clamp) > 0.8 • V ,
CE
CES
higher TJ or increased RG
25N120
25N120A
25N120A
130 180 nC
25 50 nC
55 90 nC
100
ns
250
ns
650 1000 ns
700
ns
600 800 ns
11
mJ
100
ns
250
ns
4.2
mJ
720 1000 ns
1200
ns
800 1200 ns
15
mJ
0.62 K/W
0.25
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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