ALD1107 Просмотр технического описания (PDF) - Advanced Linear Devices
Номер в каталоге
Компоненты Описание
производитель
ALD1107 Datasheet PDF : 11 Pages
| |||
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PAL, SBL, PBL packages
DA, DB packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
-10.6V
-10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter Symbol
Gate Threshold VT
Voltage
Min
-0.4
ALD1107
Typ
-0.7
Max
-1.0
Offset Voltage
VGS1-VGS2
VOS
Gate Threshold
Temperature
Drift 2
TCVT
2
10
-1.3
On Drain
Current
IDS (ON) -1.3
-2
Transconductance GIS
Mismatch
∆Gfs
Output
Conductance
GOS
0.25
0.67
0.5
40
Drain Source RDS (ON)
On Resistance
1200
1800
Drain Source
On Resistance ∆RDS (ON)
0.5
Mismatch
Drain Source
Breakdown
BVDSS
-12
Voltage
Off Drain
Current 1
IDS (OFF)
10
400
4
Gate Leakage IGSS
Current
0.1
10
1
Input
Capacitance 2
CISS
1
3
Min
-0.4
-1.3
0.25
-12
ALD1117
Typ
-0.7
Max
-1.0
2
10
-1.3
-2
0.67
0.5
40
1200
1800
0.5
10
400
4
0.1
10
1
1
3
Unit
V
Test
Conditions
IDS = -1.0µA VGS = VDS
mV IDS = -10µA VGS = VDS
mV/°C
mA VGS = VDS = -5V
mmho VDS = -5V IDS = -10mA
%
µmho VDS = -5V IDS = -10mA
Ω
VDS = -0.1V VGS = -5V
%
VDS = -0.1V VGS = -5V
V
IDS = -1.0µA VGS = 0V
pA
VDS = -12V VGS = 0V
nA TA = 125°C
pA
VDS = 0V VGS = -12V
nA TA = 125°C
pF
Notes: 1 Consists of junction leakage currents
2 Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices
2 of 11
Share Link: 