ESDA6V1-4BC6 Просмотр технического описания (PDF) - STMicroelectronics
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ESDA6V1-4BC6 Datasheet PDF : 6 Pages
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ESDA6V1-4BC6
Table 2: Absolute Maximum Ratings (Tamb = 25°C)
Symbol
Parameter
VPP ESD discharge
MIL STD 883C - Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
PPP Peak pulse power (8/20µs)
Tj Junction temperature
Tstg Storage temperature range
TL
Maximum lead temperature for soldering during 10 s at 5mm for
case
Top Operating temperature range (note 1)
Note 1: Variation of parameters is given by curves.
Table 3: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
αT Voltage temperature coefficient
VF Forward voltage drop
C Capacitance
Rd Dynamic resistance
VBR
VCL
VRM
Rd
Value
25
15
8
80
150
-55 to +150
260
-40 to +125
I
I RM
I PP
Unit
kV
W
°C
°C
°C
°C
V
VBR @
IR
IRM @ VRM
Rd
αT
C
Type
min.
max.
max.
typ.
note 2
max.
typ.
0V bias
V
V
mA
µA
V
Ω
10-4/°C
pF
ESDA6V1-4BC6 6.1
8
1
1
3
0.45
3
45
Note 2: Square pulse, IPP = 3A, tp=2.5µs.
Figure 2: Relative variation of peak pulse
power versus initial junction temperature
PPP[Tj initial] / PPP[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Tj(°C)
25
50
75
100
125
150
Figure 3: Peak pulse power versus exponential
pulse duration
PPP(W)
1000
Tj initial = 25°C
100
10
1
tp(µs)
10
100
2/6
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