ESDA6V1-4BC6(2002) Просмотр технического описания (PDF) - STMicroelectronics
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ESDA6V1-4BC6 Datasheet PDF : 5 Pages
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Test conditions
VPP
ESD discharge - MIL STD 883C - Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
PPP
Peak pulse power (8/20µs)
Tj
Junction temperature
Tstg
Storage temperature range
TL
Lead solder temperature (10 second duration)
Top
Operating temperature range (note 1)
Note 1: Variation of parameters is given by curves.
ESDA6V1-4BC6
Value
Unit
25
kV
15
8
80
W
150
°C
-55 to +150 °C
260
°C
-40 to +125
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
I
Symbol
VRM
VBR
VCL
IRM
IPP
C
Rd
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Capacitance
Dynamic resistance
VBR
VCL
VRM
I RM
V
Rd
I PP
Type
VBR @ IR IRM @ VRM
min. max.
max.
V
V
mA µA
V
ESDA6V1-4BC6
6.1
8
1
1
3
Note 1 : Square pulse, Ipp = 3A, tp=2.5µs.
Rd
typ.
note 1
Ω
0.45
αT
max.
10-4/°C
3
C
typ.
0V bias
pF
45
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
Fig. 2: Peak pulse power versus exponential pulse
duration.
PPP[Tj initial] / PPP[Tj initial=25°C]
1.1
PPP(W)
1000
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
Tj(°C)
0.0
10
0
25
50
75
100
125
150
1
Tj initial = 25°C
tp(µs)
10
100
3/5
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