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ESDA14V2-4BF1(2002) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
ESDA14V2-4BF1
(Rev.:2002)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESDA14V2-4BF1 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
ESDA14V2-4BF1
ABSOLUTE RATINGS (Tamb = 25°C)
Symbol
Test conditions
VPP
ESD discharge - MIL STD 883E - Method 3015-7
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
PPP
Peak pulse power (8/20µs)
Tj
Junction temperature
Tstg
Storage temperature range
TL
Lead solder temperature (10 seconds duration)
Top
Operating temperature range (note 1)
Note 1: Variation of parameters will be given in the final datasheet
Value
Unit
±25
kV
±15
±8
50
W
125
°C
-55 to +150
°C
260
°C
-40 to +125
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
I
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
VBR
VCL
VRM
I RM
V
IPP
Peak pulse current
C
Capacitance
Rd
Dynamic resistance
Slope = 1/Rd
I PP
Type
VBR @
min. max.
V
V
ESDA14V2- 4BF1
14.2
18
Note 1: Square pulse, IPP = 3A, tp = 2.5µs
Note 2: VBR = αT(Tamb-25°C) x VBR(25°C)
IR IRM @ VRM Rd
T
C
max.
typ. max. max
note 1 note 2 0V bias
mA
µA
V
10-4/°C pF
1
12
1
3.2
10
15
0.1
3
2/9

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