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HCF4011M013TR Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
HCF4011M013TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
HCF4011M013TR Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
HCF4011B
QUAD 2 INPUT NAND GATE
s PROPAGATION DELAY TIME
tPD = 60ns (Typ.) at VDD = 10V
s BUFFERED INPUTS AND OUTPUTS
s STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
s QUIESCENT CURRENT SPECIFIED UP TO
20V
s 5V, 10V AND 15V PARAMETRIC RATINGS
s INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
s 100% TESTED FOR QUIESCENT CURRENT
s MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4011B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4011B QUAD 2 INPUT NAND GATE
provides the system designer with direct
DIP
SOP
ORDER CODES
PACKAGE
TUBE
DIP
SOP
HCF4011BEY
HCF4011BM1
T&R
HCF4011M013TR
implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
PIN CONNECTION
September 2001
1/7

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