L6115 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

L6115

QUAD 100 V, DMOS SWITCH

STMicroelectronics 

TEST CIRCUIT (Pins x = Powerdip ; Pins (x) = Multiwatt)

Figure 3 : Quiescent Current and Output

Leakage Current..

Figure 4 : Supply Current.

L6114 - L6115

VEN = 0.8 V

Figure 5 : RDS (on).

VIN = 2 V

VEN =

square wave

{

f = 200 KHz

DC = 50 %

Figure 6 : Source-drain Diode Forward Voltage.

VCC = 14 V,

VIN = 2 V,

ID = square wave, f = 3 KHz

(*) VDS is taken during the time in which the

ID = 1.5 A

VIN = 2 V,

VDS

RDS =

ISD square wave, 1f .=5 3 KHz

VEN = 2V

DC = 2 %

DC = 2 %

- Set VEN = 0.8 V for VSD (taken during the time in which

ISD = 1.5 A)

- Set VEN = 2 V for VSD (on) (taken during the time in which

ISD = 1.5 A)

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