LCP1511DRL Просмотр технического описания (PDF) - STMicroelectronics
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LCP1511DRL Datasheet PDF : 7 Pages
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LCP1511D
FUNCTIONAL DESCRIPTION
LINE A
D1
P1
P2
D2
LINE B
TIP
- VBAT
C
RING
LINE A PROTECTION :
– For positive surges versus GND, the diode D1
will conduct.
– For negative surges versus GND, the protection
device P1 will trigger at a voltage fixed by the
-VBAT reference.
LINE B PROTECTION :
– For surges on line B, the operating mode is the
same, D2 or P2 is activated.
It is recommended to add a capacitor (C=220nF)
close to the gate of the LCP, in order to speed up
the triggering.
ct(s) Surge peak current versus overload duration.
du ITSM(A)
ro 10
9
P 8
te 7
le 6
o 5
s 4
b 3
O 2
- 1
) 0
Obsolete Product(s 1E-2
1E-1
t(s)
1E+0
1E+1
F=50Hz
Tj initial=25°C
1E+2
1E+3
5/7
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