SPX1004N Просмотр технического описания (PDF) - Signal Processing Technologies
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SPX1004N Datasheet PDF : 9 Pages
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ABSOLUTE MAXIMUM RATINGS
Forward Current……………………………………….……… 30 mA
Reverse Current………………………………………….……. 30 mA
Maximum Junction Temp……………………….…………….. 150°C
Storage Temperature Range…………………………. -65°C to 150°C
Lead Temperature Range (10 Sec.)………………………….. +300°C
TYPICAL THERMAL RESISTANCES
Package
TO-92
8L SOIC
θJA
160 °C/W
175 °C/W
θJC
80 °C/W
45 °C/W
Typical Derating
6.3 mW/°C
5.7 mW/°C
SPX1004
ELECTRICAL CHARACTERISTICS Electrical Characteristics are guaranteed over full junction temperature range
(0°C to 70°C). Ambient temperature must be derated based on power dissipation and package thermal characteristics.
Parameter
Test Conditions
Min.
SPX1004-1.2V
Typ.
Max.
Units
Reverse Breakdown Voltage
Average Temperature
Coefficient
IZ = 100 µA, TJ = 25 °C
0 °C < TA < 70 °C
Imin < IZ < 20 mA
1.231
1.225
1.235
1.235
20
1.239
1.245
V
V
ppm/°C
Minimum Operating Current
4
10
µA
Reverse Breakdown Voltage
Change With Current
Imin < IZ < 1 mA
Over Temperature
0.5
1
mV
0.5
1.5
mV
1 mA < IZ < 20 mA
Over Temperature
6.5
10
mV
6.5
20
mV
Reverse Dynamic Impedance
Wide Band Noise
Long Term Stability
IZ = 100 mA, f = 25 Hz
Over Temperature
IZ = 100 µA
10 Hz < f < 10 KHz
IZ = 100 µA
TA = 25 °C + 0.1 °C
0.2
0.6
Ω
1
1.5
Ω
60
µV
20
ppm/kH
Typical Performance Curves
Calculating Average Temperature Coefficient
for the SPX1004-1.2V Reference
00 0
∆T
-5
5000 0.5
-10
0 10 20 30 40 50 60 70
Temperature (°C)
0.025 mV/ °C
0.002 %/ °C
20 ppm/ °C
Average Temperature Coefficient =
Figure 1
∆V REF
∆T
SPX1004-1.2V Reference Voltage
vs. Ambient Temperature
1.245
1.240
IZ = 100 µA
1.235
1.230
1.225
-55 -35 -15 5 25 45 65 85 105 125
TA - Ambient Temperature (°C)
Figure 2
Rev. 12/7/00
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