RFM12N35 Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
RFM12N35 Datasheet PDF : 4 Pages
| |||
RFM12N35, RFM12N40
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFM12N35
RFM12N40
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL
350
350
12
24
±20
150
1.2
-55 to 150
260
400
400
12
24
±20
150
1.2
-55 to 150
260
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFM12N35
BVDSS ID = 250mA, VGS = 0V
RFM12N40
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0,
VGS = ±20V, VDS = 0V
ID = 12A, VGS = 10V, (Figures 6, 7)
ID = 6A, VGS = 10V
ID = 12A, VGS = 10V
ID ≈ 6A, VDS = 200V, RG = 50Ω,
VGS = 10V, RL = 33Ω,
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figures 9)
MIN TYP MAX UNITS
350
-
400
-
2
-
-
-
-
-
-
V
-
V
4
V
1
µA
25
µA
-
-
±100
nA
-
-
0.500
Ω
-
-
3
V
-
-
6.0
V
-
30
50
ns
-
105 150
ns
-
480 750
ns
-
140 200
ns
-
-
3000
pF
-
-
900
pF
-
-
400
pF
-
-
0.83 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 6A
Diode Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 100A/µs
NOTE:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
950
-
ns
5-2
Share Link: 