IRF7303TR Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

производитель

IRF7303TR

HEXFET® Power MOSFET

International Rectifier 

IRF7303

1000

800

600

VGS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds S HORTED

Crss = C gd

Coss = Cds + C gd

C is s

C oss

400

200

C rs s

0

A

1

10

100

V D S , D rain-to-S ource Voltage (V )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 2.4A

VDS = 24V

16

12

8

4

FOR TES T CIRCUIT

SEE FIGURE 12

0

A

0

5

10

15

20

25

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 150 °C

TJ = 25 °C

1

0.1

0.0

VGS = 0V A

0.5

1.0

1.5

2.0

2.5

V SD , Source-to-Drain Voltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100us

10

1ms

TA = 25 °C

TJ = 150°C

Single Pulse

1

0.1

1

10ms

10

100

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Share Link: