K2981 Просмотр технического описания (PDF) - NEC => Renesas Technology

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K2981

N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

2SK2981

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 10 A

RDS(on)2 VGS = 4.5 V, ID = 10 A

RDS(on)3 VGS = 4 V, ID = 10 A

Gate to Source Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 10 A

Drain Leakage Current

IDSS

VDS = 30 V, VGS = 0

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0

Input Capacitance

Ciss

VDS = 10 V, VGS = 0, f = 1 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

td(on)

ID = 10 A, VGS(on) = 10 V, VDD = 15 V

Rise Time

tr

RG = 10 Ω

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

ID = 20 A, VDD = 24 V, VGS = 10 V

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Body Diode forward Voltage

VF(S-D) IF = 20 A, VGS = 0

Reverse Recovery Time

trr

IF = 20 A, VGS = 0

Reverse Recovery Charge

Qrr

di/dt = 100 A/µs

MIN. TYP. MAX. UNIT

20 27 mΩ

30 40 mΩ

35 50 mΩ

1.0 1.5 2.0 V

6.0 13.0

S

10 µA

±10 µA

860

pF

350

pF

160

pF

25

ns

270

ns

65

ns

65

ns

20

nC

3.5

nC

6.5

nC

0.8

V

35

ns

30

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

RG = 10 Ω

VGS

0

t

t = 1µ s

Duty Cycle ≤ 1 %

RL

VDD

VGS

VGS

Wave Form

0 10 %

VGS (on) 90 %

ID

90 %

ID

ID

Wave Form

0 10 %

90 %

10 %

td (on)

tr

td (off)

tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D12355EJ1V0DS00

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