RFD16N05L Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
RFD16N05L Datasheet PDF : 7 Pages
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RFD16N05L, RFD16N05LSM
PSPICE Electrical Model
.SUBCKT RFD16N05L 2 1 3 ; REV 4/8/92
Ca 12 8 3.33e-9
Cb 15 14 3.11e-9
Cin 6 8 1.21e-9
Dbody 7 5 DBDMOD
Dbreak 5 11 DBKMOD
Dplcap 10 5 DPLCAPMOD
Ebreak 11 7 17 18 70.9
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evto 20 6 18 8 1
IT 8 17 1
Lgate 1 9 1.38e-9
Ldrain 2 5 1.0e-12
Lsource 3 7 1.0e-9
Mos1 16 6 8 8 MOSMOD M=0.99
Mos2 16 21 8 8 MOSMOD M=0.01
Rin 6 8 1e9
Rbreak 17 18 RBKMOD 1
Rdrain 5 16 RDSMOD 27.38e-3
Rgate 9 20 2.98
Rsource 8 7 RDSMOD 0.614e-3
Rvto 18 19 RVTOMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
DPLCAP 5
10
DRAIN
2
LDRAIN
GATE
9
20
1
LGATE RGATE
-
ESG
6
8
+
EVTO
+ 18 -
8
RSCL2
RSCL1
+ 51
5
51
ESCL
50
RDRAIN
16
VTO +
21
6
MOS1
RIN
CIN
8
DBREAK
11 +
EBREAK
17
18
-
MOS2
RSOURCE 7
DBODY
LSOURCE
3
SOURCE
S1A
12
13
8
S2A
14 15
13
S1B
CA
EGS
S2B
13
+
6
8
-
CB
+
EDS
-
14
5
8
RBREAK
17
18
RVTO
19
IT
VBAT
+
Vbat 8 19 DC 1
Vto 21 6 0.448
.MODEL DBDMOD D (IS=1.34e-13 RS=1.21e-2 TRS1=1.64e-3 TRS2=2.59e-6
+CJO=1.13e-9 TT=4.14e-8)
.MODEL DBKMOD D (RS=8.82e-2 TRS1=-2.01e-3 TRS2=7.32e-10)
.MODEL DPLCAPMOD D (CJO=0.522e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=2.054 KP=24.73 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.01e-3 TC2=5.21e-8)
.MODEL RDSMOD RES (TC1=3.66e-3 TC2=1.46e-5)
.MODEL RVTOMOD RES (TC1=-1.81e-3 TC2=1.41e-6)
.MODEL S1AMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=-4.25 VOFF=-2.25)
.MODEL S1BMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=-2.25 VOFF=-4.25)
.MODEL S2AMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=-0.65 VOFF=4.35)
.MODEL S2BMOD VSWITCH(RON=1e-5 ROFF=0.1 VON=4.35 VOFF=-0.65)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
©2003 Fairchild Semiconductor Corporation
RFD16N05L, RFD16N05LSM Rev. B1
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