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STW14NC50

N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET

STMicroelectronics 

STW14NC50

N-CHANNEL 500V - 0.31Ω - 14A TO-247

PowerMesh™II MOSFET

TYPE

VDSS

RDS(on)

ID

STW14NC50

500V

< 0.38Ω

14 A

s TYPICAL RDS(on) = 0.31Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns switching speed, gate

charge and ruggedness.

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s HIGH CURRENT, HIGH SPEED SWITCHING

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

Value

Unit

500

V

500

V

±30

V

14

A

8.7

A

56

A

190

W

1.5

W/°C

3.5

V/ns

–65 to 150

°C

150

°C

(1)ISD ≤14A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

May 2001

1/8

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