Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
NE651R479A Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NE651R479A
0.4 W L-BAND POWER GaAs HJ-FET
NEC => Renesas Technology
NE651R479A Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
NE651R479A
S-PARAMETERS
Test Conditions: V
DS
= 3.5 V, I
Dset
= 50 mA (RF OFF)
Frequency
GHz
S
11
MAG. ANG. (deg.)
S
21
MAG. ANG. (deg.)
S
12
MAG. ANG. (deg.)
S
22
MAG. ANG. (deg.)
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
0.868
0.866
0.864
0.863
0.868
0.862
0.860
0.861
0.859
0.861
0.862
0.857
0.855
0.856
0.860
0.860
0.863
−
168.8
−
172.7
−
176.9
−
179.4
176.6
173.6
170.8
168.3
165.4
162.2
159.3
156.7
153.5
150.0
146.7
142.9
140.1
6.120
5.225
4.641
4.145
3.730
3.359
3.152
2.894
2.695
2.527
2.387
2.261
2.229
2.093
1.946
1.884
1.785
96.9
95.0
93.0
91.6
89.4
88.3
87.5
85.8
85.2
84.2
82.9
82.8
80.9
77.8
76.9
75.5
73.6
0.046
0.046
0.045
0.045
0.045
0.045
0.046
0.047
0.047
0.046
0.046
0.047
0.046
0.046
0.045
0.045
0.045
15.7
14.9
14.8
15.4
15.8
16.6
16.6
15.7
15.5
16.1
17.0
17.1
17.0
16.6
16.3
16.9
18.4
0.536
0.537
0.541
0.540
0.541
0.542
0.542
0.535
0.533
0.533
0.533
0.532
0.537
0.538
0.537
0.533
0.533
−
170.3
−
173.9
−
177.1
−
179.6
178.0
175.5
173.4
171.9
170.1
167.8
165.9
163.8
161.1
158.4
156.0
154.0
149.6
4
Data Sheet P13670EJ2V0DS00
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]