NE651R479A Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE651R479A Datasheet PDF : 8 Pages
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NE651R479A
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS
8
V
VGSO
−4
V
ID
1.0
A
IGF
10
mA
IGR
10
mA
Ptot
2.5
W
Tch
150
°C
Tstg
−65 to +150
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Symbol
VDS
Gcomp
Tch
Test Conditions
MIN. TYP. MAX. Unit
−
3.5
5.5
V
−
−
5.0 Note
dB
−
−
+110
°C
Note Recommended maximum Gain Compression is 3.0 dB at VDS > 4.2 V
ELECTRICAL CHARACTERISTICS
(TA = +25 °C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain Note 1
Symbol
Test Conditions
IDSS VDS = 2.5 V, VGS = 0 V
Vp VDS = 2.5 V, ID = 14 mA
BVgd Igd = 14 mA
Rth Channel to Case
Pout f = 1.9 GHz, VDS = 3.5 V,
ID
Pin = +15 dBm, Rg = 1 kΩ,
ηadd IDset = 50 mA (RF OFF)
GL Note 2
MIN.
−
−2.0
12
−
26.0
−
52
−
TYP.
0.7
−
−
30
27.0
220
60
12.0
MAX.
−
−0.4
−
50
−
−
−
−
Unit
A
V
V
°C/W
dBm
mA
%
dB
Notes 1. Pin = 0 dBm
2. DC performance is 100 % testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet P13670EJ2V0DS00
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