PZT3906(1997) Просмотр технического описания (PDF) - Fairchild Semiconductor
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PZT3906 Datasheet PDF : 6 Pages
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
40
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
40
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain *
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
60
80
100
60
30
0.65
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure (except MMPQ3906)
IC = 10 mA, VCE = 20 V,
250
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 100 kHz
VEB = 0.5 V, IC = 0,
f = 100 kHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS (except MMPQ3906)
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 3.0 V, VBE = 0.5 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10mA
IB1 = IB2 = 1.0 mA
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
50
50
300
0.25
0.4
0.85
0.95
4.5
10.0
4.0
35
35
225
75
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
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