2SA928A-X-T9N-B(2010) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

2SA928A-X-T9N-B
(Rev.:2010)

AUDIO POWER AMPLIFIER

Unisonic Technologies 

2SA928A

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector- Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-2

A

Collector Dissipation

Junction Temperature

Storage Temperature

PC

TJ

TSTG

1

W

+150

°C

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collect Cut-off Current

Emitter Cut-off Current

DC Current Ratio

Base-Emitter on Voltage

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

„ CLASSIFICATION OF hFE

RANK

RANGE

SYMBOL

TEST CONDITIONS

BVCBO IC =-100μA, IE =0

BVCEO IC =-1mA, IB =0

BVEBO IE =-1mA, IC =0

ICBO VCB =-30V, IE =0

IEBO VBE =-5V, IC =0

hFE VCE =-2V, IC =-500mA

VBE(ON) VCE =-2V, IC =-500mA

VCE(SAT) IC =-1.5A, IB =-30mA

COB VCB =-10V, IE =0, f =1MHz

fT VCE =-2V, IC =-500mA

Q

100 ~ 200

MIN TYP MAX UNIT

-30

V

-30

V

-5

V

-100 nA

-100 nA

100

320

-1 V

-2 V

48

pF

120

MHZ

Y

160 ~ 320

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R211-009.D

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