BSR15 Просмотр технического описания (PDF) - Philips Electronics
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производитель
BSR15 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistors
Product specification
BSR15; BSR16
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
BSR15
collector cut-off current
BSR16
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
emitter cut-off current
DC current gain
BSR15
BSR16
DC current gain
BSR15
BSR16
DC current gain
BSR15
BSR16
DC current gain
DC current gain
BSR15
BSR16
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
CONDITIONS
MIN. MAX. UNIT
IE = 0; VCB = −50 V
−
IE = 0; VCB = −50 V; Tj = 150 °C
−
IE = 0; VCB = −50 V
−
IE = 0; VCB = −50 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
IC = −0.1 mA; VCE = −10 V
35
75
IC = −1 mA; VCE = −10 V
50
100
IC = −10 mA; VCE = −10 V
75
100
IC = −150 mA; VCE = −10 V; note 1
100
IC = −500 mA; VCE = −10 V; note 1
30
50
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
IC = ic = 0; VEB = −2 V; f = 1 MHz
−
IC = −50 mA; VCE = −20 V; f = 100 MHz 200
−20
nA
−20
µA
−10
nA
−10
µA
−50
nA
−
−
−
−
−
−
300
−
−
−400
−1.6
−1.3
−2.6
8
30
−
mV
V
V
V
pF
pF
MHz
1999 Apr 15
3
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