PN4258(1997) Просмотр технического описания (PDF) - Fairchild Semiconductor
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PN4258 Datasheet PDF : 6 Pages
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DC Typical Characteristics
PNP Switching Transistor
(continued)
Typical Pulsed Current Gain
vs Collector Current
200
Vce = 1V
125 °C
150
100
25 °C
50 - 40 °C
0
0.1 0.2 0.5 1 2
5 10 20 50 100
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.4
0.3
0.2
125 ºC
0.1
25 °C
- 40 ºC
0
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8
- 40 ºC
25 °C
125 ºC
0.6
0.4
0.2
0
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
P6
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25 °C
0.6
125 ºC
0.4
0.2
0
0.1
VCE = 1V
1
10
25
I C- COLLECTOR CURRENT (mA)
P 65
Collector-Cutoff Current
vs. Ambient Temperature
100
VCB= 10V
10
1
0.1
0.01
25
50
75
100
125
TA- AMBIENT TEMPERATURE (ºC)
P6
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