PN4258(1997) Просмотр технического описания (PDF) - Fairchild Semiconductor
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PN4258 Datasheet PDF : 6 Pages
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PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage* IC = 100 µA, VBE = 0
12
VCEO(sus)
Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0
12
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
12
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
4.5
ICES
Collector Cutoff Current
VCE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, TA = 65°C
ON CHARACTERISTICS*
hFE
VCE(s at)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 0.5 V
IC = 10 mA, VCE = 3.0 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
15
30
30
0.75
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
700
f = 100 MHz
IC = 10 mA, VCE = 10 V,
700
f = 100 MHz
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
SWITCHING CHARACTERISTICS
ton
Turn-On Time
td
Delay Time
tr
Rise Time
toff
Turn-Off Time
ts
Storage Time
tf
Fall Time
ts
Storage Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCC = 1.5 V, VBE(off) = 0 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 1.5 V, IC = 10mA
IB1 = IB2 = 1.0 mA
IC = 10 mA, IB1 = IB2 = 10 mA
0.01
5.0
120
0.15
0.5
0.95
1.5
3.5
3.0
15
10
15
20
20
10
20
V
V
V
V
µA
µA
V
V
V
V
MHz
MHz
pF
pF
ns
ns
ns
ns
ns
ns
ns
Spice Model
PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0
Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5
Vtf=3 Xtf=6 Rb=10)
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