BFP23 Просмотр технического описания (PDF) - Infineon Technologies

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BFP23

PNP Silicon Transistors with High Reverse Voltage

Infineon Technologies 

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Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

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Collector-base breakdown voltage

IC = 100 µA

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Emitter-base breakdown voltage

IE = 100 µA

Collector-base cutoff current

VCB = 160 V

VCB = 250 V

VCB = 160 V, TA = 150 ˚C

VCB = 250 V, TA = 150 ˚C

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Emitter-base cutoff current

VEB = 3 V

DC current gain

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V1)

IC = 30 mA, VCE = 10 V1)

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Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

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Base-emitter saturation voltage1)

IC = 20 A, IB = 2 mA

AC characteristics

Transition frequency

IC = 20 mA, VCE = 10 V, f = 20 MHz

Output capacitance

VCB = 30 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

200 –

300 –

V(BR)CB0

200 –

300 –

V(BR)EB0

6

–

ICB0

–

–

–

–

–

–

–

–

IEB0

–

–

hFE

25

–

40

–

30

–

25

–

VCEsat

–

–

–

–

VBEsat

–

–

V

–

–

–

–

–

100 nA

100 nA

20

µA

20

µA

100 nA

–

–

–

–

–

V

0.4

0.5

0.9

fT

–

Cobo

–

70 –

1.5 –

MHz

pF

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

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