BFP23 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BFP23

PNP Silicon Transistors with High Reverse Voltage

Infineon Technologies 

PNP Silicon Transistors

with High Reverse Voltage

q High breakdown voltage

q Low collector-emitter saturation voltage

q Low capacitance

q Complementary types: BFP 22, BFP 25 (NPN)

BFP 23

BFP 26

321

Type

BFP 23

BFP 26

Marking

–

Ordering Code

(tape and reel)

Q62702-F622

Q62702-F722

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation, TC = 66 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - case2)

VCE0

VCB0

VEB0

IC

ICM

IB

IBM

Ptot

Tj

Tstg

Rth JA

Rth JC

Pin Configuration

1

2

3

E

B

C

Package1)

TO-92

Values

Unit

BFP 23 BFP 26

200

300

V

200

300

6

200

mA

500

100

200

625

mW

150

˚C

– 65 … + 150

≤ 200

K/W

≤ 135

1) For detailed information see chapter Package Outlines.

2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

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