SPT7935SIT Просмотр технического описания (PDF) - Fairchild Semiconductor
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SPT7935SIT Datasheet PDF : 8 Pages
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ELECTRICAL SPECIFICATIONS
TA=TMIN–TMAX , VDD1=VDD2=VDD3=3.3 V, VREF–=1.0 V, VREF+=2.0 V, Common Mode Voltage=1.65 V, ƒCLK=20 MSPS, Bias 1=90 µA,
Bias 2=9.5 µA, Differential Input, Duty Cycle=50%, unless otherwise specified.
PARAMETERS
TEST
CONDITIONS
TEST
LEVEL
SPT7935
MIN
TYP
MAX UNITS
Dynamic Performance–Continued
Signal-To-Noise and Distortion
ƒIN = 5 MHz
ƒIN = 10 MHz
Spurious Free Dynamic Range
ƒIN = 5.0 MHz
ƒIN = 10.0 MHz
Differential Phase
Differential Gain
VI
57
61
V
56
VI
62
70
V
61
V
0.2
V
0.5
dB
dB
dB
dB
Degrees
%
Digital Inputs
Logic 1 Voltage
Logic 0 Voltage
Maximum Input Current Low
Maximum Input Current High
Input Capacitance
VIN = GND
VIN = VDD
VI
80% VDD
VI
20% VDD
VI
±1 µA
VI
±1 µA
V
1.8
pF
Digital Outputs
Logic 1 Voltage
Logic 0 Voltage
CLK to Output Delay Time (tD)
Power Supply Requirements
Supply Voltages
VDD1, VDD2, VDD3
Supply Current
IDD
Power Dissipation
Power Supply Rejection Ratio (PSRR)
IO = -2 mA
IO = +2 mA
VI
85% VDD
95% VDD
V
VI
0.1
0.4 V
IV
4
8
12 ns
IV
2.8
3.3
3.6 V
VI
24
30 mA
VI
79
100 mW
V
67
dB
TEST LEVEL CODES
TEST LEVEL TEST PROCEDURE
All electrical characteristics are subject to the
I
following conditions: All parameters having
II
min/max specifications are guaranteed. The
Test Level column indicates the specific
III
device testing actually performed during pro-
duction and Quality Assurance inspection.
IV
Any blank section in the data column indi-
cates that the specification is not tested at the
V
specified condition.
VI
100% production tested at the specified temperature.
100% production tested at TA = +25 °C, and sample tested at
the specified temperatures.
QA sample tested only at the specified temperatures.
Parameter is guaranteed (but not tested) by design and
characterization data.
Parameter is a typical value for information purposes only.
100% production tested at TA = +25 °C. Parameter is guaran-
teed over specified temperature range.
SPT7935
3
7/12/00
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