PMSTA56 Просмотр технического описания (PDF) - Philips Electronics
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PMSTA56 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
PMSTA55; PMSTA56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
PMSTA55
PMSTA56
collector-emitter voltage
PMSTA55
PMSTA56
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−60
V
−
−80
V
−
−60
V
−
−80
V
−
−4
V
−
−500 mA
−
−500 mA
−
−500 mA
−
200
mW
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
PMSTA55
IE = 0; VCB = −60 V
−
PMSTA56
IE = 0; VCB = −80 V
−
emitter cut-off current
IC = 0; VEB = −4 V
−
DC current gain
IC = −10 mA; VCE = −1 V
50
IC = −100 mA; VCE = −1 V; note 1
50
collector-emitter saturation voltage IC = −100 mA; IB = −10 mA
−
base-emitter voltage
transition frequency
IC = −100 mA; VCE = −1 V; note 1
−
IC = −100 mA; VCE = −1 V; f = 100 MHz 50
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
−100
−100
−500
−
−
−250
−1.2
−
UNIT
nA
nA
nA
mV
mV
MHz
1997 Jun 02
3
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