TIP125(2001) Просмотр технического описания (PDF) - Fairchild Semiconductor
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TIP125 Datasheet PDF : 4 Pages
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TIP125/126/127
Medium Power Linear Switching Applications
• Complementary to TIP120/121/122
1
TO-220
PNP Epitaxial Darlington Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP125
: TIP126
- 60
V
- 80
V
: TIP127
- 100
V
Collector-Emitter Voltage : TIP125
- 60
V
VCEO
: TIP126
- 80
V
: TIP127
- 100
V
Equivalent Circuit
C
B
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
-5
V
-5
A
-8
A
- 120
mA
2
W
65
W
150
°C
- 65 ~ 150
°C
R1
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP125
: TIP126
: TIP127
Test Condition
IC = -100mA, IB = 0
Min. Max. Units
-60
V
-80
V
-120
V
ICEO
ICBO
IEBO
hFE
Collector Cut-off Current
: TIP125
: TIP126
: TIP127
Collector Cut-off Current
: TIP125
: TIP126
: TIP127
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
Cob
Output Capacitance
* Pulse Test : PW≤300µs, Duty cycle ≤2%
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
-2 mA
-2 mA
-2 mA
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
-1 mA
-1 mA
-1 mA
VBE = -5V, IC = 0
-2 mA
VCE = -3V, IC = 0.5A
VCE = -3V, IC = -3A
1000
1000
IC = -3A, IB = -12mA
IC=-5A, IB=-20mA
-2
V
-4
V
VCE = -3V, IC = -3A
-2.5
V
VCB = -10V, IE = 0, f = 0.1MHz
300 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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