5082-3080 Просмотр технического описания (PDF) - Microsemi Corporation
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5082-3080 Datasheet PDF : 6 Pages
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1N5767 (5082-3080) SERIES
1N5957SERIES
DESCRIPTION
The 1N5767 and the 1N5957 PIN diodes
are based upon low capacitance PIN chips
designed with long minority carrier lifetime,
and thick intrinsic width. Thus operation as
low as 1 MHz is possible with low
distortion. Additionally, the low diode
capacitance allows useful operation well
into the microwave frequency range.
The 1N5767 (5082-3080) is a general
purpose low power PIN diode designed for
Both switch and attenuator applications.
The 1N5957 is primarily used as an attenuator
PIN diode and is particularly suitable wherever
current controlled, wide dynamic range resistance
elements are required. The 1N5957 has also been
characterized for the 75Ω attenuator, commonly
employed in CATV systems.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Reverse Voltage
VR (IR = 10 µA)
Average Power Dissipation: (25 oC)
Free Air (PA)
Operating and Storage
Temperature Range
100 V
400 mW (Derate linearly to 175 oC)
-65 oC to +175 oC
KEY FEATURES
Useful attenuation from 1 µA
to 100 mA bias
Capacitance below 0.4 pF
Low distortion in switches and
attenuators
Metallurgical bond
Sealed in glass
Thermally matched construction
APPLICATIONS/BENEFITS
Surface mount package available
RoHS compliant packaging
available
Copyright 2005
Rev. 0, 2006-01-17
Microsemi
Page 1
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