Figure 6. Current transfer ratio versus Figure 9. Output characteristics
diode current (TA=50°C) VCE=5.0 V
CNY17F-2, -3 (TA=25°C) IC=f(VCE)
Figure 12. Saturation voltage current
and modulation CNY17F-1
VCEsat=f (IC) (TA=25°C)
1
2
3
4
Figure 7. Current transfer ratio versus Figure 10. Forward voltage VF=f(IF)
diode current (TA=75°C) VCE=5.0 V
Figure 13. Saturation voltage versus
collector current and modulation depth
CNY17F-2 VCEsat=f (IC) (TA=25°C)
1
2
3
4
Figure 8. Current transfer ratio versus
temperature (IF=10 mA, VCE=5.0 V)
IC/IF=f (T)
Figure 11. Collector emitter off-state
current ICEO=f(V,T) (TA=75°C, IF=0)
Figure 14. Saturation voltage versus
collector current and modulation depth
CNY17F-3 VCEsat=f (IC) (TA=25°C)
4
3
2
1
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
3
CNY17F
March 17, 2000-13