SFH640 Просмотр технического описания (PDF) - Infineon Technologies

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SFH640

5.3 kV TRIOS® High BVCER Voltage Phototransistor Optocoupler

Infineon Technologies 

FEATURES

• CTR at IF=10 mA, VCE=10 V

SFH640-1, 40-80%

SFH640-2, 63-125%

SFH640-3*, 100-200%

• Good CTR Linearity with Forward Current

• Low CTR Degradation

• Very High Collector-emitter Breakdown

Voltage, BVCER=300 V

• Isolation Test Voltage: 5300 VRMS

• Low Coupling Capacitance

• High Common Mode Transient Immunity

• Phototransistor Optocoupler

6 Pin DIP Package with Base Connection

• Field Effect Stable by TRIOS

(TRansparent IOn Shield)

•

V

DE

VDE 0884 Available with Option 1

• Underwriters Lab File #E52744

DESCRIPTION

The SFH 640 is an optocoupler with very high

BVCER, a minimum of 300 volts. It is intended for

telecommunications applications or any DC appli-

cation requiring a high blocking voltage. The

SFH640 is a “better than” replacement for H11D1.

*Supplies from this group can't always be guaran-

teed due to unforeseeable yield spread.

SFH640

5.3 kV TRIOS High BVCER Voltage

Phototransistor Optocoupler

Dimensions in inches (mm)

321

pin one ID

.248 (6.30)

.256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)

.022 (0.55)

Anode 1

4 56

.335 (8.50)

.343 (8.70)

Cathode 2

NC 3

.048 (0.45)

.022 (0.55)

.130 (3.30)

.150 (3.81)

.031 (0.80) min. 3°–9°

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

6 Base

5 Collector

4 Emitter

.300 (7.62)

typ.

18°

.010 (.25)

typ.

.300–.347

(7.62–8.81)

.114 (2.90)

.130 (3.0)

Maximum Ratings (TA=25°C)

Emitter

Reverse Voltage................................................................................. 6.0 V

DC Forward Current......................................................................... 60 mA

Surge Forward Current (tP≤10 µs) .................................................... 2.5 A

Total Power Dissipation................................................................ 100 mW

Detector

Collector-emitter Voltage ................................................................. 300 V

Collector-base Voltage...................................................................... 300 V

Emitter-base Voltage ......................................................................... 7.0 V

Collector Current............................................................................. 50 mA

Surge Collector Current (tP≤1.0 ms) .............................................. 100 mA

Total Power Dissipation................................................................ 300 mW

Package

Isolation Test Voltage (between emitter and

detector, refer to climate DIN 40046 part 2

Nov. 74) .................................................................5300 VRMS/7500 VPK

Isolation Resistance

VIO=500 V, TA=25°C .................................................................. ≥1012 Ω

VIO=500 V, TA=100°C ................................................................ ≥1011 Ω

Insulation Thickness between Emitter and Detector ...................≥0.4 mm

Creepage..................................................................................... ≥7.0 mm

Clearance .................................................................................... ≥7.0 mm

Comparative Tracking Index

per DIN IEC 112/VDE 0303, part1 ....................................................175

Storage Temperature Range........................................... –55°C to +150°C

Operating Temperature Range ....................................... –55°C to +100°C

Junction Temperature .......................................................................100°C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane≥1.5 mm)...............................................260°C

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–259

February 26, 2000-21

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