1215 Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated
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1215 Datasheet PDF : 15 Pages
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DS1215
AC ELECTRICAL CHARACTERISTICS ROM/RAM = GND
PARAMETER
SYMBOL MIN
TYP
Read Cycle Time
CEI Access Time
OE Access Time
CEI to Output Low Z
OE to Output Low Z
CEI to Output High Z
OE to Output High Z
Read Recovery
Write Cycle
Write Pulse Width
Write Recovery
Data Setup
Data Hold Time
CEI Pulse Width
RST Pulse Width
CEI Propagation Delay
CEI High to Power–Fail
tRC
120
tCO
tOE
tCOE
10
tOEE
10
tOD
tODO
tRR
20
tWC
120
tWP
100
tWR
20
tDS
40
tDH
10
tCW
100
tRST
200
tPD
5
10
tPF
AC ELECTRICAL CHARACTERISTICS ROM/RAM = GND
PARAMETER
SYMBOL MIN
TYP
Recovery at Power–Up
VCC Slew Rate 4.5 – 3.0V
tREC
tF
0
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL MIN
CIN
COUT
TYP
5
5
(0°C to 70°C; VCC = 4.5 to 5.5V)
MAX
UNITS NOTES
ns
100
ns
100
ns
ns
ns
40
ns
40
ns
ns
ns
ns
ns
4
ns
5
ns
5
ns
ns
20
ns
2, 3
0
ns
(0°C to 70°C; VCC > 4.5V)
MAX
UNITS NOTES
2
ms
ms
MAX
10
10
UNITS
pF
pF
(tA = 25°C)
NOTES
032697 8/15
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