RMWW12001 Просмотр технического описания (PDF) - Raytheon Company
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RMWW12001 Datasheet PDF : 6 Pages
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RMWW12001
12-24 GHz Doubler MMIC
Description
Features
PRODUCT INFORMATION
The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to
multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The
RMWW12001 utilizes Raytheon’s 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety
of multiplier applications.
u 4 mil substrate
u Conversion loss 10 dB (typ.)
u No DC bias required
u Chip size 1.5 mm x 2.5 mm
Absolute
Maximum
Ratings
Parameter
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Symbol
PIN
TC
Tstg
Value
+22
-30 to +85
-55 to +125
Units
dBm
°C
°C
Electrical
Characteristics
Parameter
Min Typ Max Unit
Input Frequency Range
8.5
12 GHz
(At 25ºC), Output Frequency Range 17
24 GHz
50Ω system, Input Drive Power
+16 +18
dBm
Pin=+18 dBm Conversion Loss
10 12.5 dB
Conversion Loss Variation
vs. Frequency
2
dB
Parameter
Min Typ Max Unit
Fundamental Rejection
3rd Harmonic Rejection
4th Harmonic Rejection
5th Harmonic Rejection
Input Return Loss
(Pin = +18 dBm)
-20
dBc
-25
dBc
-25
dBc
-35
dBc
12
dB
Application
Information
Recommended
Procedure for
Operation
www.raytheon.com/micro
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: The RMWW12001 does not require DC bias.
Apply RF input signal at the appropriate
frequency band and input drive level.
Step 2: Follow turn-off sequence of:
Turn off RF input power.
Characteristic performance data and specifications are subject to change without notice.
Revised March 2, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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