RMPA1902A-58 Просмотр технического описания (PDF) - Raytheon Company

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RMPA1902A-58

PCS GaAs MMIC Power Amplifier

Raytheon Company 

RMPA1902A-58

PCS GaAs MMIC Power Amplifier

Test Procedure

for the

evaluation board

(RMPA1902-58-TB)

PRODUCT INFORMATION

CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2, VG3) WHILE CORRESPONDING DRAIN VOLTAGES

(VD1,VD2,VD3) ARE PRESENT MAY DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier:

Step 1: Turn off RF input power.

Step 2: Use GND terminal of the evaluation board

for the ground of the DC supplies.

Slowly apply gate supply voltages of typical

-2.0 V to the board terminals

Vgg=Vgg1=Vgg2=Vgg3

Step 3: Slowly apply drain supply voltages of +3.5 V to

the board terminals Vdd=Vdd1=Vdd2=Vdd.

Adjust Vgg to set the total quiescent current

(with no RF applied) Idq to nominal 135 mA.

[Gate supply voltages (Vgg i.e. Vgg1, Vgg2,

Vgg3) may be adjusted, only if quiescent

current (Idq1 to Idq3) values desired are

different from those noted on the data

summary supplied with product samples]

Step 4: After the bias condition is established, RF input

signal may now be applied at the appropriate

frequency band and appropriate power level.

Step 5: Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii) Turn down and off drain voltages

Vdd=Vdd1=Vdd2=Vdd3

(iii) Turn down and off gate voltages

Vgg=Vgg1=Vgg2=Vgg3

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised April 7, 2000

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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