16AM12 Просмотр технического описания (PDF) - GHz Technology
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16AM12 Datasheet PDF : 3 Pages
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16AM12
12 Watts, 22 Volts, Class A
Linear, 1600 MHz
GENERAL DESCRIPTION
The 16AM12 is a COMMON EMITTER transistor capable of providing 12
Watts Class A, RF output power in the band 1500 - 1700 MHz. The transistor
includes double input and output prematching for full broadband capability.
Gold metalization and diffused ballasting are used to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55AT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
58 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
45 Volts
3.5 Volts
4.0 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
SEE NOTE BELOW
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
η
Pg
VSWR l
Power Out - 1 dB
Power Input
Efficiency
Power Gain - Small Signal
Load Mismatch Tolerance
F = 1600 MHz
12
Vcc = 22 Volts, Icq = 2A
8.0
Pout = 12 Watts
9:1
Watts
2.25 Watts
dB
BVces
BVebo
BVceo
Hfe
θjc
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Emitter Breakdown
Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 10 mA
Ic = 50 mA
Vce = 5 V, Ic = 1 A
Tc = 25 oC
45
Volts
3.5
Volts
24
Volts
15
2.8
3.0 oC/W
Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the mounting
area, refer to 55AW.
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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