DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPG2106TB-E3(2002) Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге
Компоненты Описание
производитель
UPG2106TB-E3
(Rev.:2002)
NEC
NEC => Renesas Technology NEC
UPG2106TB-E3 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
µPG2106TB,µPG2110TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
(Bottom View)
3
43
44
3
2
52
55
2
1
61
66
1
Caution Marking is an example of µPG2106TB.
Pin No.
1
2
3
4
5
6
Pin Name
VDD1
GND
OUTPUT/VDD2
VAGC
GND
INPUT
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage1, 2
Gain Control Voltage
Input Power
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
VDD1, 2
VAGC
Pin
PD
TA
Tstg
Ratings
6.0
6.0
8
140 Note
40 to +90
45 to +150
Unit
V
V
dBm
mW
°C
°C
Note Mounted on double copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RENGE (TA = +25°C)
Parameter
Supply Voltage1, 2
Gain Control Voltage
Input Power
Symbol
VDD1, 2
VAGC
Pin
MIN.
2.7
0
TYP.
3.0
18
MAX.
3.3
2.5
10
Unit
V
V
dBm
2
Data Sheet PG10168EJ01V0DS

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]