UPG2106TB-E3(2002) Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
UPG2106TB-E3 Datasheet PDF : 12 Pages
| |||
DATA SHEET
GaAs INTEGRATED CIRCUITS
µPG2106TB,µPG2110TB
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone
and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
These devices are housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Operation frequency : µPG2106TB
: fopt = 889 to 960 MHz
: µPG2110TB
: fopt = 1 429 to 1 453 MHz
• Supply voltage
: µPG2106TB, µPG2110TB : VDD1, 2 = 2.7 to 3.3 V (3.0 V TYP.)
• Circuit current
: µPG2106TB, µPG2110TB : IDD = 25 mA TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pout = +8 dBm
• High power gain : µPG2106TB
: GP = 30 dB TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pin = −18 dBm
: µPG2110TB
: GP = 27 dB TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V, Pin = −18 dBm
• Gain control range : µPG2106TB, µPG2110TB : GCR = 40 dB TYP. @ VDD1, 2 = 3.0 V, VAGC = 0.5 to 2.5 V,
Pin = −18 dBm
• Low distortion
: µPG2106TB
: Padj1 = −60 dBc TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V,
Pout = +8 dBm, f = 925 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth
: µPG2110TB
: Padj1 = −60 dBc TYP. @ VDD1, 2 = 3.0 V, VAGC = 2.5 V,
Pout = +8 dBm, f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Digital Cellular: PDC 800 MHz, PDC 1.5 GHz etc.
ORDERING INFORMATION
Part Number
µPG2106TB-E3
Package
6-pin super minimold
µPG2110TB-E3
Marking
G1V
G1Y
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2106TB, µPG2110TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10168EJ01V0DS (1st edition)
(Previous No. P14318EJ1V0DS00)
Date Published July 2002 CP(K)
Printed in Japan
The mark • shows major revised points.
© NEC Corporation 1999
© NEC Compound Semiconductor Devices 2002
Share Link: 