2SJ503 Просмотр технического описания (PDF) - SANYO -> Panasonic
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2SJ503 Datasheet PDF : 4 Pages
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2SJ503
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–4A
ID=–4A, VGS=–10V
ID=–2A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–4A
VDS=–10V, VGS=–10V, ID=–4A
VDS=–10V, VGS=–10V, ID=–4A
IS=–4A, VGS=0
Switching Time Test Circuit
VIN
0V
—10V
VIN
PW=10µs
D.C.≤1%
VDD=—15V
ID=—4A
RL=3.75Ω
D
VOUT
G
P.G
50Ω
2SJ503
S
Ratings
Unit
–30 V
±20 V
–4 A
–16 A
1.0 W
20 W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min
typ
max
–30
V
–10 µA
±10 µA
–1.0
–2.5 V
4
6
S
65
85 mΩ
130 180 mΩ
470
pF
280
pF
140
pF
10
ns
35
ns
60
ns
45
ns
15
nC
3
nC
4
nC
–1.0 –1.5 V
No.5932–2/4
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