2SJ356 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
2SJ356 Datasheet PDF : 6 Pages
| |||
2SJ356
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10
VGS = 0
Pulsed
–1
–0.1
–0.01
–0.001
–0.0001
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
VDD = –25 V
VGS(on) = –10 V
100
10
td(off)
tf
tr
td(on)
10 000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1 000
100
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
10
–1
–10
VDS - Drain to Source Voltage - V
–100
1 000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0
di/dt = 50 A/µs
100
0
1 000
100
–1
–10
ID - Drain Current - A
10
–0.05 –0.1
–0.5 –1
–5 –10
IF - Diode Forward Current -A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Using ceramic substrate of
7.5 cm2 × 0.7 mm
10
1
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
4
Share Link: 