2SJ356 Просмотр технического описания (PDF) - NEC => Renesas Technology

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Компоненты Описание

производитель

2SJ356

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

–5

Pulsed

–4

–3

–10 V

–4.5 V

–4.0 V

–2

–3.5 V

–1

0

–3.0 V

–2.5 V

VGS = –2.0 V

–1

–2

–3

–4

–5

VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

10

VDS = –10 V

Pulsed

1

0.1

0.01

TA = –25 ˚C

TA = 0 ˚C

TA = 25 ˚C

TA = 75 ˚C

TA = 150˚C

0.001

–0.0001 –0.001 –0.01

–0.1

–1

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

1

VGS = –10 V

Pulsed

0.8

TA = 150 ˚C

0.6

TA = 75 ˚C

TA = 25 ˚C

0.4

TA = 0 ˚C

0.2

TA = –25 ˚C

0

–0.001 –0.01

–0.1

–1

–10

ID - Drain Current - A

2SJ356

–10

–1

–0.1

–0.01

–0.001

TRANSFER CHARACTERISTICS

VDS = –10 V

Pulsed

TA = 150 ˚C

TA = –25 ˚C

TA = 0 ˚C

TA = 25 ˚C

TA = 75 ˚C

–0.0001

–0.00001

–1

–2

–3

–4

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

1.5

VGS = –4 V

Pulsed

1

TA = 150 ˚C

TA = 75 ˚C

0.5

TA = 25 ˚C

TA = 0 ˚C

TA = –25 ˚C

0

–0.001 –0.01

–0.1

–1

–10

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

1

Pulsed

0.8

ID = 2.0 A

0.6

ID = 1.0 A

0.4

0.2

0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20

VGS - Gate to Source Voltage - V

3

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