3N163-4 Просмотр технического описания (PDF) - Linear Integrated System

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производитель

3N163-4

P-CHANNEL ENHANCEMENT MODE MOSFET

Linear Integrated System 

SWITCHING CHARACTERISTICS TA=25°C and VBS=0 unless otherwise noted)

SYMBOL

CHARACTERISTICS

3N163

3N164

UNITS

MIN MAX MIN MAX

ton

Turn-On Delay Time

tr

Rise Time

toff

Turn-Off Time

12

12

ns

24

24

50

50

CONDITIONS

VDD=-15V

ID(on)=-10mA

RG=RL=1.4KΩ

(NOTE 2)

R2

50 Ω

VDD

R1

TYPICAL SWITCHING WAVEFORM

10%

10%

tr

VOUT

t on

90%

10%

INPUT PULSE

Rise Time ≤2ns

Pulse Width ≥200ns

Switching Times Test Circuit

Switching Times Test Circuit

10%

toff

SAMPLING SCOPE

Tr ≤0.2ns

CIN≤2pF

RIN≥10M

NOTES:

1. Devices must not be tested at ±125V more than once, nor for longer than 300ms.

2. For design reference only, not 100% tested.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress

ratings only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

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