STM2DPFS30L Просмотр технического описания (PDF) - STMicroelectronics

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STM2DPFS30L

P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8 STripFE™ MOSFET PLUS SCHOTTKY RECTIFIER

STMicroelectronics 

STM2DPFS30L

THERMAL DATA

Rthj-amb (*) Thermal Resistance Junction-ambient

Ts tg Storage Temperature Range

Tj

Junction Temperature

(*) Mounted on a 1 in2 pad of 2oz Cu in FR-4 board

MOSFET

Maximum

100

-65 to 150

150

oC/W

oC

oC

MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbo l

V (BR)D SS

IDSS

IGSS

P ar am et e r

Test Conditions

Dr ain- s our c e

Breakdown Voltage

ID = 250 µA VGS = 0

Zero Gat e Volt age VDS = Max Rat ing

Drain Current (VGS = 0) VDS = Max Rat ing

Tc = 125 oC

Gate-body

Leakage VGS = ± 20 V

Current (VDS = 0)

Min.

30

Typ. Max.

1

10

± 100

Unit

V

µA

µA

nA

ON (∗)

Symbo l

VGS(th)

RDS(on)

ID(o n)

P ar am et e r

Test Conditions

Gat e Threshold Voltage VDS = VGS ID = 250 µA

Static Drain-source On VGS = 10V ID = 1 A

Resistance

VGS = 4. 5V ID = 1 A

On State Drain Current VDS > ID(o n) x RDS(on )max

VGS = 10 V

Min.

1

2

Typ.

1.7

0.145

0.18

Max.

2.5

0.165

0.2

Unit

V

Ω

A

DYNAMIC

Symbo l

gfs (∗)

Ciss

Coss

Crss

P ar am et e r

Test Conditions

Forward

Transconductance

VDS > ID(o n) x RDS(on )ma x ID =1 A

Input Capacitance

Output Capacitance

VDS = 25 V

Reverse

T ransfer

Capacitance

f = 1 MHz

VGS = 0

Min.

Typ.

2

Max.

Unit

S

510 660

pF

170 220

pF

55

72

pF

2/6

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