Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
NTE2380
NTE2381
V(BR)DSS VGS = 0, ID = 0.25mA
IDSS
VDS = 500V, VGS = 0
500 –
–
V
–
– 0.25 mA
–
– 0.2 mA
NTE2380 & NTE2381
VDS = 400V, VGS = 0, TJ = +125°C –
Gate–Body Leakage Current, Forward IGSSF
NTE2380
VGSF = 20V, VDS = 0
–
NTE2381
–
– 1.0 mA
– 500 nA
– 100 nA
Gate–Body Leakage Current, Reverse
NTE2380
NTE2381
IGSSR
VGSF = 20V, VDS = 0
–
– 500 nA
–
– 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
NTE2380
NTE2381
Static Drain–Source On–Resistance
NTE2380
NTE2381
Forward Transconductance
NTE2380
NTE2381
Dynamic Characteristics
VGS(th)
rDS(on)
VDS = VGS
ID = 0.25mA
ID = 1mA
VGS = 10V, ID = 1A
gFS
ID = 1A
VDS ≥ 7.5V
VDS = 15V
2.0 – 4.0 V
2.0 – 4.5 V
–
–
3
Ω
–
–
6
Ω
1
–
0.5 –
– mhos
– mhos
Input Capacitance
NTE2380
NTE2381
Ciss
VDS = 25V, VGS = 0, f = 1MHz
–
– 400 pF
–
– 100 pF
Output Capacitance
Coss
NTE2380
NTE2381
–
– 150 pF
–
– 200 pF
Reverse Transfer Capacitance
Crss
NTE2380
–
– 40 pF
NTE2381
–
– 80 pF
Switching Characteristics (Note 1)
Turn–On Time
NTE2380
NTE2381
Rise Time
NTE2380
NTE2381
Turn–Off Time
NTE2380
NTE2381
Fall Time
NTE2380
NTE2381
td(on)
ID = 1A,
Rgen = 50Ω
tr
td(off)
tf
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
–
– 60 ns
–
– 50 ns
–
– 50 ns
–
– 100 ns
–
– 60 ns
–
– 150 ns
–
– 30 ns
–
– 50 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.