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H11G2 Просмотр технического описания (PDF) - Motorola => Freescale

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H11G2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
H11G1 H11G2 H11G3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
INPUT LED
Reverse Leakage Current (VR = 3 V)
IR
Forward Voltage IF = 10 mA)
VF
Capacitance (V = 0 V, f = 1 MHz)
CJ
DARLINGTON OUTPUT (TA = 25°C and IF = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(IC = 1 mA, IF = 0)
H11G1
H11G2
H11G3
V(BR)CEO
100
80
55
Collector–Base Breakdown Voltage
(IC = 100 µA, IF = 0)
H11G1
H11G2
H11G3
V(BR)CBO
100
80
55
Emitter–Base Breakdown Voltage (IE = 100 µA, IF = 0)
V(BR)EBO
7
Collector–Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = 80°C)
(VCE = 60 V)
(VCE = 60 V, TA = 80°C)
(VCE = 30 V)
H11G1
H11G1
H11G2
H11G2
H11G3
ICEO
Capacitance (VCB = 10 V, f = 1 MHz)
CCB
COUPLED (TA = 25°C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
(VCE = 5 V, IF = 1 mA)
(VCE = 5 V, IF = 1 mA)
H11G1, 2
H11G1, 2
H11G3
IC (CTR)(2)
100 (1000)
5 (500)
2 (200)
Collector–Emitter Saturation Voltage
(IF = 1 mA, IC = 1 mA)
(IF = 16 mA, IC = 50 mA)
(IF = 20 mA, IC = 50 mA)
H11G1, 2
H11G1, 2
H11G3
Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)
Isolation Resistance(3) (V = 500 Vdc)
VCE(sat)
VISO
7500
Isolation Capacitance(3) (V = 0 V, f = 1 MHz)
CIO
SWITCHING (TA = 25°C)
Turn–On Time
Turn–Off Time
p (IF = 10 mA, VCC = 5 V, RL = 100 ,
Pulse Width 300 µs, f = 30 Hz)
ton
toff
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
4. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
Typ(1)
0.05
1.1
18
6
0.75
0.85
0.85
1011
2
5
100
Max
Unit
10
µA
1.5
Volts
pF
Volts
Volts
Volts
100
nA
100
µA
100
nA
100
µA
100
nA
pF
mA (%)
Volts
1
1
1.2
Vac(pk)
Ohms
pF
µs
2
Motorola Optoelectronics Device Data

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