NTE3040 Просмотр технического описания (PDF) - NTE Electronics

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NTE3040

Optoisolator NPN Transistor Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Phototransistor

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Collector Breakdown Voltage

Collector Dark Current

Capacitance

Coupled Characteristics

V(BR)CEO IC = 10mA, IF = 0

V(BR)CBO IC = 100µA, IF = 0

V(BR)ECO IE = 100µA, IF = 0

ICEO VCE = 10V, IF = 0

CJ VCE = 10V, f = 1MHZ

30 – – V

70 – – V

7––V

– 5 50 nA

– 2 – pf

DC Current Transfer Ratio

CTR IF = 10mA, VCE = 10V

6–

Collector–Emitter Saturation Voltage VCEO(sat) IF = 60mA, IC = 1.6mA

100 –

Isolation Resistance

R(I–O) V(I–O) = 500VDC

100 –

Input to Output Capacitance

C(I–O) V(I–O) = 0, f = 1MHZ

––

Switching Speeds

tr, tf VCE = 10V, ICE = 2mA

–5

RL = 100Ω ICB = 50µA

–

3

–%

–V

– GΩ

2 pf

– µs

– µs

Pin Connection Diagram

Anode 1

6 Base

Cathode 2

5 Collector

N.C. 3

4 Emitter

654

1 23

.070 (1.78) Max

.350 (8.89)

Max

.200 (5.08)

Max

.260

(6.6)

Max

.350

(8.89)

Max

.300 (7.62)

.085 (2.16) Max

.100 (2.54)

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