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6N135(1999) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
6N135
(Rev.:1999)
Infineon
Infineon Technologies Infineon
6N135 Datasheet PDF : 3 Pages
1 2 3
FEATURES
• Isolation Test Voltage: 2500 VRMS
• TTL Compatible
• High Bit Rates: 1.0 Mbit/s
• High Common-Mode Interference Immunity
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
• Field-Effect Stable by TRIOS*
• Underwriters Lab File #E52744
Description
The 6N135 and 6N136 are optocouplers with a GaAIAs
infrared emitting diode, optically coupled with an inte-
grated photodetector which consists of a photodiode
and a high-speed transistor in a DIP-8 plastic package.
Signals can be transmitted between two electrically sepa-
rated circuits up to frequencies of 2.0 MHz. The potential dif-
ference between the circuits to be coupled is not allowed to
exceed the maximum permissible reference voltages.
6N135
6N136
High-Speed 2.5 kV TRIOS®
Optocoupler
Dimensions in inches (mm)
pin one ID
4 321
.255 (6.48)
.268 (6.81)
5 678
NC 1
Anode 2
Cathode 3
.030 (0.76)
.045 (1.14)
4° typ.
.379 (9.63)
.390 (9.91)
NC 4
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
8
Cathode
(VCC)
7 Base
(VB)
6 Collector
(VO)
5 Emitter
(GND)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Maximum Ratings
Emitter
Reverse Voltage ..............................................5.0 V
Forward Current.............................................25 mA
Peak Forward Current
(t =1.0 ms, duty cycle 50%) .........................50 mA
Maximum Surge Forward Current
(t 1.0 µs, 300 pulses/s) .................................1.0 A
Thermal Resistance................................... 700 K/W
Total Power Dissipation (TA70°C) ...............45 mW
Detector
Supply Voltage ..................................... –0.5 to 15 V
Output Voltage...................................... –0.5 to 15 V
Emitter-Base Voltage .......................................5.0 V
Output Current..............................................8.0 mA
Maximum Output Current ..............................16 mA
Base Current................................................ 5.0 mA
Thermal Resistance................................... 300 K/W
Total Power Dissipation (TA70°C) .............100 mW
Package
Isolation Test Voltage (between emitter and
detector climate per DIN 50014,
part 2, Nov. 74 (t=1.0 min.) ................2500 VRMS
Pollution Degree (DIN VDE 0109)....................... 2.0
Creepage................................................... 7.0 mm
Clearance .................................................. 7.0 mm
Comparative Tracking Index per
DIN IEC112/VDE 0303 part 1,
Group IIIa per DIN VDE 6110 ........................ 175
Isolation Resistance
VIO=500 V, TA = 25°C ............................... 1012
VIO=500 V, TA = 100° ................................ 1011
Storage Temperature Range ........–55°C to +125°C
Ambient Temperature Range....... –55°C to +100°C
Soldering Temperature (max. 10 sec., dip
soldering 0.5 mm from case bottom)....... 260°C
Characteristics TA=0 to 70°C unless otherwise specified, TA=25°C typ.
Emitter
Symbol Value
Unit Condition
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Temperature Coeffi-
cient, Forward Voltage
VF
VBR
IR
CO
VF /TA
1.6 (1.9)
5.0
0.5 (10)
125
–1.7
V
µA
pF
mV/°C
IF=16 mA
IR=10 µA
VR=5.0 V
VR=0 V, f=1.0 MHz
IF=16 mA
Detector
Supply Current
Logic Low
Supply Current
Logic High
Output Voltage,
Output Low
6N135
6N136
Output Current,
Output High
Output Current,
Output High
Current Gain
Package
ICCL
ICCH
VOL
IOH
HFE
150
µA
0.01 (1)
0.1 (0.4) V
3.0 (500) nA
0.01 (1) µA
150
IF=16 mA, VO open,
VCC=15 V
IF=0 mA, VO open,
VCC=15 V
IF=16 mA,
VCC=4.5 V
IO=1.1 mA
IO=2.4 mA
IF=0 mA,
VO=VCC=5.5 V
IF=0 mA,
VO=VCC=15 V
VO=5.0 V, IO=3.0 mA
Coupling Capaci-
tance, Input-Output CIO
0.6
Current Transfer Ratio
pF
f=1.0 MHz
6N135
6N136
6N135
6N136
CTR
CTR
CTR
CTR
16 (7.0) %
35 (19)
5.0
15
IF=16 mA, VO=0.4 V,
VCC=4.5 V, TA=25°C
IF=16 mA, VO=0.5 V,
VCC=4.5 V
*TRIOSTRansparent IOn Shield
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
1
April 10, 1999

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