DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RMDA00100(2001) Просмотр технического описания (PDF) - Raytheon Company

Номер в каталоге
Компоненты Описание
производитель
RMDA00100
(Rev.:2001)
Raytheon
Raytheon Company Raytheon
RMDA00100 Datasheet PDF : 5 Pages
1 2 3 4 5
RMDA00100
OC-192 Modulator Driver MMIC
Description
ADVANCED INFORMATION
The Raytheon RMDA00100 is a medium power broadband amplifier MMIC suitable as a driver for external optical
modulators for OC-192 fiber optic systems. It is available in die form, and is manufactured using Raytheon’s
advanced 0.15µm pHEMT process. Applications include Long haul, Medium haul and Metro fiber systems.
Features
DC-20 GHz saturated power bandwidth
High gain: 11dB typ
Low group delay
Low gain ripple.
Psat = 23 dBm typ
Low power dissipation
Chip size 3.84 mm x 1.68 mm
Absolute
Maximum
Ratings1
Parameter
Supply Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Symbol
Vd
Pin
Tc
Tstg
Value
Unit
+8.0
V
18
dBm
-40 to +85
°C
-40 to +100
°C
Electrical
Characteristics2,3
Parameter
Min Typ Max Unit
Saturated Power Bandwidth
20
GHz
3 dB Bandwidth (small signal)
20
GHz
Gain
11
dB
Output Power (saturated)
23
dBm
Group Delay
±20
pS
Parameter
Input Return Loss
Output Return Loss
Quiescent Current
Vd
Vg1
Min Typ Max Unit
15
dB
10
dB
100
mA
8.0
V
-0.3
V
www.raytheon.com/micro
Notes:
1. Off-chip decoupling and blocking capacitors required.
2. All parameters met at Tc = 25°C, Vd = 8.0V, Idq= 100mA.
3. Measured in a 50 ohm system.
Characteristic performance data and specifications are subject to change without notice.
Revised November 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]