KSE13003TH1ATU Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSE13003TH1ATU

NPN Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Conditions

BVCEO

IEBO

hFE

VCE(sat)

Collector-Emitter Breakdown Voltage

Emitter Cut-off Current

*DC Current Gain

*Collector Emitter Saturation Voltage

VBE(sat)

*Base Emitter Saturation Voltage

Cob

Output Capacitance

fT

Current Gain Bandwidth Product

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

* Pulse Test: Pulse Width=5ms, Duty Cycle£10%

IC = 5mA, IB = 0

VEB = 9V, IC = 0

VCE = 2V, IC = 0.5A

VCE = 2V, IC =1A

IC = 0.5A, IB = 0.1A

IC = 1A, IB = 0.25A

IC = 1.5A, IB = 0.5A

IC = 0.5A, IB = 0.1A

IC = 1A, IB = 0.25A

VCB = 10V , f = 0.1MHz

VCE = 10V, IC = 0.1A

VCC =125V, IC = 1A

IB1 = 0.2A, IB2 = - 0.2A

RL = 125W

Min.

400

8

5

4

Typ.

21

Max

10

40

Units

V

mA

0.5

V

1

V

3

V

1

V

1.2

V

pF

MHz

1.1

ms

4.0

ms

0.7

ms

Package Marking and Ordering Information

Device Item (notes_2) Device Marking

Package

Packing Method

Remarks

KSE13003H1ASTU

KSE13003H2ASTU

KSE13003H3ASTU

1 E13003

2 E13003

3 E13003

TO-126

TO-126

TO-126

TUBE

TUBE

TUBE

Notes_2 :

1) The Affix “-H1/-H2/-H3” means the hFE classification.

2) The Sufix “-STU” means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com

© 2007 Fairchild Semiconductor Corporation

KSE13003 Rev. 1.0.0

2

www.fairchildsemi.com

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