BU204 Просмотр технического описания (PDF) - Usha Ltd

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производитель

BU204

Silicon Power Transistor

Usha Ltd  

Thermal Characteristics :

R thjc

PD

Tj & T Stg

Thermal resistance junction to case

Total Power Dissipation @ Tc = 25 °C

@ Tc = 90 °C

Derate above 95 °C

Operating and Storage Junction Temperature Range

2.5 °C/W

36 Watts

10 Watts

0.4 W /°C

-65 °C ….+ 115 °C

ELECTRICAL CHARACTERISTICS :

[ Tc = 25 °C unless otherwise noted ]

Characteristic

Symbol Min Typ

Max

Unit

Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]

Collector – Emitter Sustaining VCEO(sus) 600

Voltage [ Ic = 100 mAdc , IB = 0 ]

Collector Cutoff Current

ICES

[ VCE = 1300 Vdc , VBE = 0 ]

Emitter Base Voltage

VEBO

5

[ IE = 10 mA , Ic = 0 ]

Vdc

1

mAdc

Vdc

On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]

Collector-Emitter

Saturation

Voltage

[ Ic = 2 Adc , IB = 1 Adc ]

Base-Emitter Saturation Voltage

[ Ic = 2 Adc , IB = 1 Adc ]

Dynamic Characteristics :

VCE(sat)

VBE(sat)

Vdc

5

Vdc

1.5

Current Gain – Bandwidth Product

fT

4

MHz

[ Ic = 0.1 Adc , VCE=5 Vdc , f=1

MHz ]

Output Capacitance

Cob

50

pF

[ VCB= 10 Vdc , IE = 0 , f = 1 MHz

]

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